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| ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9.5 m ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25C to 150C Continuous TC = 25C; Note 1 TC = 90C, Note 1 TC = 25C; Note 1, 2 TC = 90C, Note 1, 2 Package lead current limit TC = 25C TC = 25C Maximum Ratings 100 20 120 90 120 90 45 tlb 300 -55 ... +175 175 -55 ... +150 V V A A A A A mJ W C C C C V~ N/lb g Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated Applications Automotive 42V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters l Battery powered systems - choppers or inverters for motor control in hand tools - battery chargers l G D S Isolated back surface* G = Gate, S = Source * Patent pending D = Drain, 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7.3 18 2 TJ = 25C TJ = 125C 0.2 200 9.5 m m 4 20 V A mA nA RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = 90 A, Note 3 TJ = 125C Note 3 VGS = 10 V, ID = ID90, VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = 20 VDC, VDS = 0 Advantages l Easy assembly: no screws or isolation foils required l Space savings l High power density (c) 2002 IXYS All rights reserved 98901 (2/02) IXUC 120N10 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 220 VGS = 10 V, VDS = 80 V, ID = 50 A 36 88 35 VGS = 10 V, VDS = 40 A ID = 90 A, RG = 4.7 85 150 70 0.5 0.30 nC nC nC ns ns ns ns K/W K/W ISOPLUS220 OUTLINE Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Source-Drain Diode Symbol VSD trr Test Conditions IF = 60 A, VGS = 0 V Note 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.9 80 1.4 V ns Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IF = 75 A, di/dt = -200 A/s, VDS = 30 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025 |
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